Library of bipolar transistor model parameters

 * Library of bipolar transistor model parameters

*

* This is a reduced version of MicroSim's bipolar transistor model library.

*   You are welcome to make as many copies of it as you find convenient.

*

* Release date: November 1988

*

* The parameters in this model library were derived from the data sheets for

* each part.  Each part was characterize using the Parts option.

* Devices can also be characterized without Parts as follows:

*

* NE, NC Normally set to 4

* BF, ISE, IKF These are adjusted to give the nominal beta vs.

* collector current curve.  BF controls the mid-

* range beta.  ISE/IS controls the low-current

* roll-off.  IKF controls the high-current rolloff.

* ISC Set to ISE.

* IS, RB, RE, RC These are adjusted to give the nominal VBE vs.

* IC and VCE vs. IC curves in saturation.  IS

* controls the low-current value of VBE.  RB+RE

* controls the rise of VBE with IC.  RE+RC controls

* the rise of VCE with IC.  RC is normally set to 0.

* VAF Using the voltages specified on the data sheet

* VAF is set to give the nominal output impedance

* (RO on the .OP printout) on the data sheet.

* CJC, CJE Using the voltages specified on the data sheet

* CJC and CJE are set to give the nominal input

* and output capacitances (CPI and CMU on the .OP

* printout; Cibo and Cobo on the data sheet).

* TF Using the voltages and currents specified on the

* data sheet for FT, TF is adjusted to produce the

* nominal value of FT on the .OP printout.

* TR Using the rise and fall time circuits on the

* data sheet, TR (and if necessary TF) are adjusted

* to give a transient analysis which shows the

* nominal values of the turn-on delay, rise time,

* storage time, and fall time.

* KF, AF These parameters are only set if the data sheet has

* a spec for noise.  Then, AF is set to 1 and KF

* is set to produce a total noise at the collector

* which is greater than the generator noise at the

* collector by the rated number of decibels.

*

*

.model Q2N2222A NPN(Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307

+ Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1

+ Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75

+ Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10)

* National pid=19 case=TO18

* 88-09-07 bam creation


.model Q2N2907A PNP(Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829

+ Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2 Isc=0 Ikr=0 Rc=.715

+ Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75

+ Tr=111.3n Tf=603.7p Itf=.65 Vtf=5 Xtf=1.7 Rb=10)

* National pid=63 case=TO18

* 88-09-09 bam creation


.model Q2N3904 NPN(Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259

+ Ise=6.734f Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1

+ Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75

+ Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)

* National pid=23 case=TO92

* 88-09-08 bam creation


.model Q2N3906 PNP(Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0

+ Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p

+ Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n

+ Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10)

* National pid=66 case=TO92

* 88-09-09 bam creation


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